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Nexperia Transistor (BJT) - Discrete BC817-40,215 SOT 23 No. of channels 1 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23
Type
NPN
Collector current
500 mA
Collector emitter voltage U(CEO)
45 V
Datasheet (PDF)
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Minimum order quantity: 10
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€ 0.07
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Technical specifications
- Type
BC817-40,215
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 23
- Manufacturer
Nexperia
- Manuf. code
NEX
- Channels
1
- Type
NPN
- Collector current
500 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
700 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
250 mW
- DC current gain (hFE)
250
- DC current gain hFE - reference current
100 mA
- DC current gain hFE - reference voltage
1 V
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 1112837 Nexperia Transistor (BJT) - Discrete BC817-40,215 SOT 23 No. of channels 1 NPN
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