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Vishay SI2301CDS-T1-GE3 MOSFET 1 P-channel 1.6 W SOT 23 3
Product type
MOSFET
Enclosure
SOT 23 3
Type
P-channel
Power (max) P(TOT)
1.6 W
R(DS)(on)
112 mΩ
Datasheet (PDF)
EAN:
Part number:
Item no:
Number
Minimum order quantity: 10
Total (€ 0.32 / piece)
€ 0.49
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€ 0.32
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Only 9 Piece(s) available
Technical specifications
- Type
SI2301CDS-T1-GE3
- Product type
MOSFET
- Enclosure
SOT 23 3
- Manufacturer
Vishay
- Manuf. code
VIS
- Type
P-channel
- I(d)
3.1 A
- UBR DSS
20 V
- Power (max) P(TOT)
1.6 W
- R(DS)(on)
112 mΩ
- R(DS)(on) reference current
2.8 A
- R(DS)(on) reference voltage
4.5 V
- U(GS)(th) max.
1 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
10 nC
- Q(G) reference voltage
4.5 V
- C(ISS)
405 pF
- C(ISS) reference voltage
10 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
TrenchFET®
- Operating temperature (max.)
+150 °C
- Transistor property
Standard
- U(DSS)
20 V
- Channels
1
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 597293 Vishay SI2301CDS-T1-GE3 MOSFET 1 P-channel 1.6 W SOT 23 3
User & Safety Instructions
User & Safety Instructions 597293 Vishay SI2301CDS-T1-GE3 MOSFET 1 P-channel 1.6 W SOT 23 3
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