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Vishay SI2308BDS-T1-GE3 MOSFET 1 N-channel 1.66 W SOT 23 3

Two black electronic components in rectangular form with metal contacts, likely SMD diodes, on a white background.
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Product type
MOSFET
Enclosure
SOT 23 3
Type
N-channel
Power (max) P(TOT)
1.66 W
R(DS)(on)
156 mΩ
Datasheet (PDF)
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Part number:
Item no:
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Technical specifications

Type

SI2308BDS-T1-GE3

Product type

MOSFET

Enclosure

SOT 23 3

Manufacturer

Vishay

Manuf. code

VIS

Type

N-channel

I(d)

2.3 A

UBR DSS

60 V

Power (max) P(TOT)

1.66 W

R(DS)(on)

156 mΩ

R(DS)(on) reference current

1.9 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

3 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

6.8 nC

Q(G) reference voltage

10 V

C(ISS)

190 pF

C(ISS) reference voltage

30 V

Operating temperature (min.)

-55 °C

Mounting type

Surface-mount

Series

TrenchFET®

Operating temperature (max.)

+150 °C

Transistor property

Standard

U(DSS)

60 V

Channels

1

Content

1 pc(s)

Documents & Downloads

Datasheet

Datasheet 597300 Vishay SI2308BDS-T1-GE3 MOSFET 1 N-channel 1.66 W SOT 23 3

User & Safety Instructions

User & Safety Instructions 597300 Vishay SI2308BDS-T1-GE3 MOSFET 1 N-channel 1.66 W SOT 23 3

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Accessories

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