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Infineon Technologies IRFB4710PBF MOSFET 1 N-channel 3.8 W TO 220AB
Product type
MOSFET
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
3.8 W
R(DS)(on)
14 mΩ
Datasheet (PDF)
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Part number:
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Total (€ 3.49 / piece)
€ 3.49
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Technical specifications
- Type
IRFB4710PBF
- Product type
MOSFET
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
75 A
- UBR DSS
100 V
- Power (max) P(TOT)
3.8 W
- R(DS)(on)
14 mΩ
- R(DS)(on) reference current
45 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
5.5 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
170 nC
- Q(G) reference voltage
10 V
- C(ISS)
6160 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 564033 Infineon Technologies IRFB4710PBF MOSFET 1 N-channel 3.8 W TO 220AB
User & Safety Instructions
User & Safety Instructions 564033 Infineon Technologies IRFB4710PBF MOSFET 1 N-channel 3.8 W TO 220AB
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