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ON Semiconductor Transistor (BJT) - Discrete BC63916-D27Z TO 92 3 No. of channels 1 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
TO 92 3
Type
NPN
Collector current
1 A
Collector emitter voltage U(CEO)
80 V
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€ 0.15
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Technical specifications
- Type
BC63916-D27Z
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 92 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
1 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
500 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1 W
- DC current gain (hFE)
100
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
2 V
- Transit frequency f(T)
100 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 1262976 ON Semiconductor Transistor (BJT) - Discrete BC63916-D27Z TO 92 3 No. of channels 1 NPN
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