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ON Semiconductor Transistor (BJT) - Discrete BD13916STU TO 126 No. of channels 1 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
TO 126
Type
NPN
Collector current
1.5 A
Collector emitter voltage U(CEO)
80 V
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Minimum order quantity: 5
Total (€ 1.99 / piece)
€ 1.99
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Technical specifications
- Type
BD13916STU
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 126
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
1.5 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
500 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1.25 W
- DC current gain (hFE)
100
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
2 V
- Mounting type
Through-hole
- Content
1 pc(s)
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 1263037 ON Semiconductor Transistor (BJT) - Discrete BD13916STU TO 126 No. of channels 1 NPN
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