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ON Semiconductor Transistor (BJT) - Discrete BD13916STU TO 126 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 126
Type
NPN
Collector current
1.5 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
1.25 W
169 Piece(s)
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Quantity (Piece(s))
Savings
Package size (plus VAT.)
5
-
€ 0.58
15
9% = € 0.05
€ 0.53
25
12% = € 0.07
€ 0.51
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Number
Minimum order quantity: 5
Total (€ 0.58 / piece)
€
Technical specifications
- Type
BD13916STU
- Enclosure
TO 126
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
1.5 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
500 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1.25 W
- DC current gain (hFE)
100
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
2 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Product type
Transistor (BJT) - Discrete
