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Vishay SI4946BEY-T1-E3 MOSFET 2 N-channel 3.7 W SOIC 8

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Product type
MOSFET
Enclosure
SOIC 8
Type
N-channel
Power (max) P(TOT)
3.7 W
R(DS)(on)
41 mΩ
Datasheet (PDF)
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Technical specifications

Type

SI4946BEY-T1-E3

Product type

MOSFET

Enclosure

SOIC 8

Manufacturer

Vishay

Manuf. code

VIS

Type

N-channel

I(d)

6.5 A

UBR DSS

60 V

Power (max) P(TOT)

3.7 W

R(DS)(on)

41 mΩ

R(DS)(on) reference current

5.3 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

3 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

25 nC

Q(G) reference voltage

10 V

C(ISS)

840 pF

C(ISS) reference voltage

30 V

Operating temperature (min.)

-55 °C

Mounting type

Surface-mount

Series

TrenchFET®

Operating temperature (max.)

+175 °C

Transistor property

Logic level gate

U(DSS)

60 V

Channels

2

Content

1 pc(s)

Documents & Downloads

Datasheet

Datasheet 597347 Vishay SI4946BEY-T1-E3 MOSFET 2 N-channel 3.7 W SOIC 8

User & Safety Instructions

User & Safety Instructions 597347 Vishay SI4946BEY-T1-E3 MOSFET 2 N-channel 3.7 W SOIC 8

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Accessories

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