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ON Semiconductor FDC3512 MOSFET 1 N-channel 800 mW SOT 23 6

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Product type
MOSFET
Enclosure
SOT 23 6
Type
N-channel
Power (max) P(TOT)
800 mW
R(DS)(on)
77 mΩ
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Total (€ 0.83 / piece)
€ 1.19
-30 %
€ 0.83
prav.tax.untaxed incl. VAT 
plus € 19.99 
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without further shipping costs 
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Technical specifications

Type

FDC3512

Product type

MOSFET

Enclosure

SOT 23 6

Manufacturer

ON Semiconductor

Manuf. code

OnS

Type

N-channel

I(d)

3 A

UBR DSS

80 V

Power (max) P(TOT)

800 mW

R(DS)(on)

77 mΩ

R(DS)(on) reference current

3 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

4 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

18 nC

Q(G) reference voltage

10 V

C(ISS)

634 pF

C(ISS) reference voltage

40 V

Operating temperature (min.)

-55 °C

Mounting type

Surface-mount

Series

PowerTrench®

Operating temperature (max.)

+150 °C

Transistor property

Standard

U(DSS)

80 V

Channels

1

Content

1 pc(s)

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 1263334 ON Semiconductor FDC3512 MOSFET 1 N-channel 800 mW SOT 23 6

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