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ON Semiconductor FDC3512 MOSFET 1 N-channel 800 mW SOT 23 6
EAN:
Part number:
Item no:
Enclosure
SOT 23 6
Type
N-channel
Power (max) P(TOT)
800 mW
R(DS)(on)
77 mΩ
R(DS)(on) reference current
3 A
Total (€ 0.82 / piece)
€ 1.00
-18 %
€ 4.10
plus VAT.
Technical specifications
- Type
FDC3512
- Enclosure
SOT 23 6
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Type
N-channel
- UBR DSS
80 V
- Power (max) P(TOT)
800 mW
- R(DS)(on)
77 mΩ
- R(DS)(on) reference current
3 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
18 nC
- Q(G) reference voltage
10 V
- C(ISS)
634 pF
- C(ISS) reference voltage
40 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
PowerTrench®
- Operating temperature (max.)
+150 °C
- Transistor property
Standard
- U(DSS)
80 V
- Channels
1
- Content
1 pc(s)
- I(d)
3 A
- Product type
MOSFET
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 1263334 ON Semiconductor FDC3512 MOSFET 1 N-channel 800 mW SOT 23 6